> I believe GAA is the next gen tech for the node process. Samsung is the first foundry to do GAA w/3nm while TSMC is sticking w/FinFET for their 3nm. It'll be interesting to see how 3nm FinFET compare to 3nm GAA.

Comparing Apples to Oranges, and doing doing a comparison on taste vs. size.

The device may well be awesome, but first ICs using it not so.

The biggest advancements in under 14nm were in metal, not so much with the device, process, or materials.

Even if Samsung will produce a better device design, they will still have to catch up to TSMC in so many, many other areas.

Only single digit number of people on this planet will ever know the exact measurements of FinFet vs. GAAFet

But one thing for sure, Samsung saying that they pioneered a new device ahead of TSMC does indeed sound very, and impressive to a certain category big co. people regardless of actual performance.